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July 2003
2003 Fairchild Semiconductor Corp.
FDD6690A Rev EW)
FDD6690A
30V N-Channel PowerTrench
MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
• DC/DC converter
• Motor Drives
Features
• 46 A, 30 V R
DS(ON)
= 12 mΩ @ V
GS
= 10 V
R
DS(ON)
= 14 mΩ @ V
GS
= 4.5 V
• Low gate charge
• Fast Switching Speed
• High performance trench technology for extremely
low R
DS(ON)
G
S
D
TO-252
D-PAK
(TO-252)
S
G
D
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage
±20
V
I
D
Continuous Drain Current @T
C
=25°C (Note 3) 46 A
@T
A
=25°C (Note 1a) 12
Pulsed (Note 1a) 100
Power Dissipation @T
C
=25°C (Note 3) 56
@T
A
=25°C (Note 1a) 3.3
P
D
@T
A
=25°C (Note 1b) 1.5
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +175
°C
Thermal Characteristics
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 2.7
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 45
R
θJA
(Note 1b)
96
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity
FDD6690A FDD6690A D-PAK (TO-252) 13’’ 12mm 2500 units
FDD6690A