NXP Semiconductors PBLS4004D Switch User Manual


 
1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
plastic package.
1.2 Features
Low V
CEsat
(BISS) and resistor-equipped transistor in one package
Low threshold voltage (< 1 V) compared to MOSFET
Low drive power required
Space-saving solution
Reduction of component count
1.3 Applications
Supply line switches
Battery charger switches
High-side switches for LEDs, drivers and backlights
Portable equipment
1.4 Quick reference data
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
[2] Pulse test: t
p
300 µs; δ≤0.02.
PBLS4004D
40 V PNP BISS loadswitch
Rev. 03 — 6 January 2009 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
TR1; PNP low V
CEsat
transistor
V
CEO
collector-emitter voltage open base - - 40 V
I
C
collector current
[1]
--1A
R
CEsat
collector-emitter saturation
resistance
I
C
= 500 mA;
I
B
= 50 mA
[2]
- 240 340 m
TR2; NPN resistor-equipped transistor
V
CEO
collector-emitter voltage open base - - 50 V
I
O
output current - - 100 mA
R1 bias resistor 1 (input) 15.4 22 28.6 k
R2/R1 bias resistor ratio 0.8 1 1.2