Panasonic 2SA1018 Network Card User Manual


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Transistors
1
Publication date: January 2003 SJC00008BED
2SA1018
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC1473
■ Features
• High collector-emitter voltage (Base open) V
CEO
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−250 V
Collector-emitter voltage (Base open) V
CEO
−200 V
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−70 mA
Peak collector current I
CP
−100 mA
Collector power dissipation P
C
750 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= −100 µA, I
B
= 0 −200 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −1 µA, I
C
= 0 −5V
Collector-emitter cut-off current (Base open)
I
CEO
V
CE
= −120 V, I
B
= 0 −1 µA
Forward current transfer ratio
*
h
FE
V
CE
= −10 V, I
C
= −5 mA 60 220
Collector-emitter saturation voltage V
CE(sat)
I
C
= −50 mA, I
B
= −5 mA −1.5 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 10 mA, f = 200 MHz 50 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
=0, f = 1 MHz 10 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
5.0
±0.2
0.7
±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
123
+0.6
–0.2
4.0
±0.2
5.1
±0.2
12.9
±0.5
2.3
±0.2
0.7
±0.2
1 : Emitter
2 : Collector
3 : Base
TO-92-B1 Package
Rank Q R
h
FE
60 to 150 100 to 220
This product complies with the RoHS Directive (EU 2002/95/EC).
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