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Transistors
1
Publication date: November 2002 SJC00026BED
2SA1738
Silicon PNP epitaxial planar type
For high speed switching
■ Features
• High speed switching (Pair with 2SC3757)
• Low collector-emitter saturation voltage V
CE(sat)
• Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−15 V
Collector-emitter voltage (Base open) V
CEO
−15 V
Emitter-base voltage (Collector open) V
EBO
−4V
Collector current I
C
−50 mA
Peak collector current I
CP
−100 mA
Collector power dissipation P
C
200 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= −8 V, I
E
= 0 − 0.1 µA
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= −3 V, I
C
= 0 − 0.1 µA
Forward current transfer ratio h
FE1
*
V
CE
= −1 V, I
C
= −10 mA 50 150
h
FE2
V
CE
= −1 V, I
C
= −1 mA 30
Collector-emitter saturation voltage V
CE(sat)
I
C
= −10 mA, I
B
= −1 mA − 0.1 − 0.2 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 10 mA, f = 200 MHz 800 1
500 MHz
Collector output capacitance C
ob
V
CB
= −5 V, I
E
= 0, f = 1 MHz 1 pF
(Common base, input open circuited)
Turn-on time t
on
Refer to the switching time measurement circuit
12 ns
Turn-off time t
off
20 ns
Storage time t
stg
19 ns
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
0.40
+0.10
–0.05
(0.65)
1.50
+0.25
–0.05
2.8
+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5˚
10˚
0 to 0.1
1.1
+0.2
–0.1
1.1
+0.3
–0.1
Rank Q R
h
FE1
50 to 120 90 to 150
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC-59
Mini3-G1 Package
Marking Symbol: AK
This product complies with the RoHS Directive (EU 2002/95/EC).