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Publication date: April 2007 SJC00347AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA1739G
Silicon PNP epitaxial planar type
For high speed switching
Complementary to 2SC3938G
■ Features
• High speed switching
• Low collector-emitter saturation voltage V
CE(sat)
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−15 V
Collector-emitter voltage (Base open) V
CEO
−15 V
Emitter-base voltage (Collector open) V
EBO
−4V
Collector current I
C
−50 mA
Peak collector current I
CP
−100 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= −8 V, I
E
= 0 − 0.1 µA
Emitter-base cutoff current (Collector open)
I
EBO
V
CE
= −3 V, I
C
= 0 − 0.1 µA
Forward current transfer ratio h
FE1
*
V
CE
= −1 V, I
C
= −10 mA 50 150
h
FE2
V
CE
= −1 V, I
C
= −1 mA 30
Collector-emitter saturation voltage V
CE(sat)
I
C
= −10 mA, I
B
= −1 mA − 0.1 − 0.2 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 10 mA, f = 200 MHz 800 1
500 MHz
Collector output capacitance C
ob
V
CB
= −5 V, I
E
= 0, f = 1 MHz 1 pF
(Common base, input open circuited)
Turn-on time t
on
Refer to the switching time
12 ns
Turn-off time t
off
measurement circuit 20 ns
Storage time t
stg
19 ns
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank Q R No-rank
h
FE1
50 to 120 90 to 150 50 to 150
Marking symbol AXQ AXR AX
Product of no-rank is not classified and have no marking symbol for rank.
■ Package
• Code
SMini3-F2
• Marking Symbol: AX
• Pin Name
1.Base
2.Emitter
3.Collector