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Publication date: March 2003 SJC00028BED
2SA1748
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4562
■ Features
• High transition frequency f
T
• Small collector output capacitance C
ob
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−50 V
Collector-emitter voltage (Base open) V
CEO
−50 V
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−50 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= −10 µA, I
E
= 0 −50 V
Collector-emitter voltage (Base open) V
CEO
I
C
= −1 mA, I
B
= 0 −50 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −5V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= −10 V, I
E
= 0 − 0.1 µA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= −10 V, I
B
= 0 −100 µA
Forward current transfer ratio
*
h
FE
V
CE
= −10 V, I
C
= −2 mA 200 500
Collector-emitter saturation voltage V
CE(sat)
I
C
= −10 mA, I
B
= −1 mA − 0.1 − 0.3 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 2 mA, f = 200 MHz 250 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 1.5 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
2.1
±0.1
1.3
±0.1
0.3
+0.1
–0.0
2.0
±0.2
1.25
±0.10
(0.425)
1
3
2
(0.65)
(0.65)
0.2
±0.1
0.9
±0.1
0 to 0.1
0.9
+0.2
–0.1
0.15
+0.10
–0.05
5˚
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Rank Q R
h
FE
200 to 400 250 to 500
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Marking Symbol: AL
This product complies with the RoHS Directive (EU 2002/95/EC).