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Publication date: September 2004 SJC00309AED
2SA1791J
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4656J
■ Features
• High transition frequency f
T
• Small collector output capacitance C
ob
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−50 V
Collector-emitter voltage (Base open) V
CEO
−50 V
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−50 mA
Collector power dissipation P
C
125 mW
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= −10 µA, I
E
= 0 −50 V
Collector-emitter voltage (Base open) V
CEO
I
C
= −1 mA, I
B
= 0 −50 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −5V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= −10 V, I
E
= 0 − 0.1 µA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= −10 V, I
B
= 0 −100 µA
Forward current transfer ratio
*
h
FE
V
CE
= −10 V, I
C
= −2 mA 200 500
Collector-emitter saturation voltage V
CE(sat)
I
C
= −10 mA, I
B
= −1 mA − 0.1 − 0.3 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 2 mA, f = 200 MHz 250 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 1.5 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
0.27
±0.02
3
12
0.12
+0.03
–0.01
0.80
±0.05
(0.80)
0.85
1.60
±0.05
0 to 0.02
0.10 max.
0.70
+0.05
–0.03
(0.375)
5˚
5˚
1.60
+0.05
–0.03
1.00
±0.05
(0.50)(0.50)
+0.05
–0.03
Rank Q R
h
FE
200 to 400 250 to 500
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Marking Symbol: AL
1 : Base
2 : Emitter EIAJ : SC-89
3 : Collector SSMini3-F1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).