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Transistors
Publication date : November 2008 SJC00426BED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2021G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5609G
Features
High forward current transfer ratio h
FE
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
–60 V
Collector-emitter voltage (Base open) V
CEO
–50 V
Emitter-base voltage (Collector open) V
EBO
–7 V
Collector current I
C
–100 mA
Peak collector current I
CP
–200 mA
Collector power dissipation P
C
100 mW
Junction temperature T
j
125
°C
Storage temperature T
stg
–55 to +125
°C
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= –10 mA, I
E
= 0 –60 V
Collector-emitter voltage (Base open) V
CEO
I
C
= –100 mA, I
B
= 0 –50 V
Emitter-base voltage (Collector open) V
EBO
I
E
= –10 mA, I
C
= 0 –7 V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= –20 V, I
E
= 0 – 0.1
mA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= –10 V, I
B
= 0 –100
mA
Forward current transfer ratio h
FE
V
CE
= –10 V, I
C
= –2 mA 180 390
Collector-emitter saturation voltage V
CE(sat)
I
C
= –100 mA, I
B
= –10 mA – 0.3 – 0.5 V
Transition frequency f
T
V
CB
= –10 V, I
E
= 1 mA, f = 200 MHz 80 MHz
Collector output capacitance
(Common base, input open circuited)
C
re
V
CB
= –10 V, I
E
= 0, f = 1 MHz 2.7 15 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Package
Code
SSSMini3-F2
Pin Name
1. Base
2. Emitter
3. Collector
Marking Symbol: 3E