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Publication date: March 2003 SJC00042BED
2SA2028
Silicon PNP epitaxial planar type
For DC-DC converter
■ Features
• Low collector-emitter saturation voltage V
CE(sat)
• High-speed switching
•
S-Mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−20 V
Collector-emitter voltage (Base open) V
CEO
−20 V
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−1A
Peak collector current I
CP
−3A
Collector power dissipation P
C
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= −10 µA, I
E
= 0 −20 V
Collector-emitter voltage (Base open) V
CEO
I
C
= −1 mA, I
B
= 0 −20 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −5V
Forward current transfer ratio h
FE
V
CE
= −2 V, I
C
= −100 mA 160 560
Collector-emitter saturation voltage V
CE(sat)
I
C
= −200 mA, I
B
= −10 mA −40 −100 mV
Transition frequency f
T
V
CB
= −10 V, I
E
= 10 mA, f = 200 MHz 170 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 20 30 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Marking Symbol: AT
2.1
±0.1
1.3
±0.1
0.3
+0.1
–0.0
2.0
±0.2
1.25
±0.10
(0.425)
1
3
2
(0.65)
(0.65)
0.2
±0.1
0.9
±0.1
0 to 0.1
0.9
+0.2
–0.1
0.15
+0.10
–0.05
5˚
10˚
This product complies with the RoHS Directive (EU 2002/95/EC).