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Transistors
Publication date: April 2007 SJC00351AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2122G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5950G
Features
High forward current transfer ratio h
FE
Smini typ package, allowing downsizing of the equipment and automatic
insertion through the tape packing
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
-60
V
Collector-emitter voltage (Base open) V
CEO
-50
V
Emitter-base voltage (Collector open) V
EBO
-7
V
Collector current I
C
-100
mA
Peak collector current I
CP
-200
mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150
°C
Storage temperature T
stg
-55 to +150 °C
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= -10 mA, I
E
= 0
-60
V
Collector-emitter voltage (Base open) V
CEO
I
C
= -2 mA, I
B
= 0
-50
V
Emitter-base voltage (Collector open) V
EBO
I
E
= -10 mA, I
C
= 0
-7
V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= -20 V, I
E
= 0
- 0.1 mA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= -10 V, I
B
= 0
-100 mA
Forward current transfer ratio h
FE
V
CE
= -10 V, I
C
= -2 mA 160 460
Collector-emitter saturation voltage V
CE(sat)
I
C
= -100 mA, I
B
= -10 mA
- 0.2 - 0.5
V
Transition frequency f
T
V
CB
= -10 V, I
E
= 1 mA, f = 200 MHz 80 MHz
Collector output capacitance
(Common base, input open circuited)
C
ob
V
CB
= -10 V, I
E
= 0, f = 1 MHz 2.2 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Package
Code
SMini3-F2
Marking symbol : 7L
Pin name
1. Base
2. Emitter
3. Collector