Panasonic 2SA2163 Network Card User Manual


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Transistors
Publication date: May 2005 SJC00336AED
1
2SA2163
Silicon PNP epitaxial planar type
For high frequency amplifi cation
Features
Features
High transition frequency f
High transition frequency f
T
High transition frequency f
T
High transition frequency f
Optimum for high-density mounting and downsizing of the equipment for
Optimum for high-density mounting and downsizing of the equipment for
Ultraminiature leadless package
0.6 mm
×
1.0 mm (height 0.39 mm)
Absolute Maximum Ratings
Absolute Maximum Ratings
T
a
= 25
a
= 25
a
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
−
30
V
Collector-emitter voltage (Base open)
V
CEO
−
20
V
Emitter-base voltage (Collector open)
V
EBO
−
5
V
Collector current
I
C
−
30
mA
Collector power dissipation
P
C
100
mW
Junction temperature
T
j
T
j
T
125
°
C
Storage temperature
T
stg
T
stg
T
−
55 to
+
125
°
C
Electrical Characteristics
Electrical Characteristics
T
a
= 25
a
= 25
a
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Base-emitter voltage
V
BE
V
BE
V
V
CE
=
CE
=
CE
−
10 V, I
C
=
−
1 mA
−
0.7
− 0.7−
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
−
10 V, I
E
= 0
E
= 0
E
−
0.1
− 0.1−
µ
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
=
CE
=
CE
−
20 V, I
B
= 0
−
100
µ
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
=
−
5 V, I
C
= 0
−
10
µ
A
Forward current transfer ratio
h
FE
h
FE
h
V
CE
=
CE
=
CE
−
10 V, I
C
=
−1
mA
70
220
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
−
10 mA, I
B
=
−
1 mA
−
0.1
− 0.1−
V
Transition frequency
f
T
f
T
f
V
CB
=
−
10 V, I
E
= 1 mA, f = 200 MHz
E
= 1 mA, f = 200 MHz
E
150
300
MHz
Noise fi gure
NF
V
CB
=
−
10 V, I
E
= 1 mA, f = 5 MHz
E
= 1 mA, f = 5 MHz
E
2.8
4.0
dB
Reverse transfer impedance
Z
rb
V
CB
=
−
10 V, I
E
= 1 mA, f = 2 MHz
E
= 1 mA, f = 2 MHz
E
22
50
Ω
Reverse transfer capacitance (Common emitter)
C
re
V
CB
=
−
10 V, I
E
= 1 mA, f = 10.7 MHz
E
= 1 mA, f = 10.7 MHz
E
1.2
2.0
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Marking Symbol: 6J
Unit: mm
1: Base
2: Emitter
3: Collector ML3-N2 Package
0.60±0.05
1.00±0.05
2
1
3
0.39
+0.01
−0.03
0.25±0.05
0.25±0.05
0.50±0.05
0.65±0.01
0.15±0.05
2
1
0.35±0.01
0.05±0.03
0.05±0.03
3
This product complies with the RoHS Directive (EU 2002/95/EC).
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