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Publication date: October 2008 SJC00413AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB0710A
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD0602A
Features
Large collector current I
C
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
-60
V
Collector-emitter voltage (Base open) V
CEO
-50
V
Emitter-base voltage (Collector open) V
EBO
-5
V
Collector current I
C
- 0.5
A
Peak collector current I
CP
-1
A
Collector power dissipation P
C
200 mW
Junction temperature T
j
150
°C
Storage temperature T
stg
-55 to +150
°C
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= -10 mA, I
E
= 0
-60
V
Collector-emitter voltage (Base open) V
CEO
I
C
= -10 mA, I
B
= 0
-50
V
Emitter-base voltage (Collector open) V
EBO
I
E
= -10 mA, I
C
= 0
-5
V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= -20 V, I
E
= 0
- 0.1 mA
Forward current transfer ratio
*
1
h
FE1
*
2
V
CE
= -10 V, I
C
= -150 mA 85 340
h
FE2
V
CE
= -10 V, I
C
= -500 mA 40
Collector-emitter saturation voltage
*
1
V
CE(sat)
I
C
= -300 mA, I
B
= -30 mA
- 0.35 - 0.60
V
Base-emitter saturation voltage
*
1
V
BE(sat)
I
C
= -300 mA, I
B
= -30 mA
-1.1 -1.5
V
Transition frequency f
T
V
CB
= -10 V, I
E
= 50 mA, f = 200 MHz 200 MHz
Collector output capacitance
(Common base, input open circuited)
C
ob
V
CB
= -10 V, I
E
= 0, f = 1 MHz 6 15 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Rank Q R S No-rank
h
FE1
85 to 170 120 to 240 170 to 340 85 to 340
Marking symbol DQ DR DS D
Product of no-rank is not classified and have no indication for rank.
Package
Code
Mini3-G1
Pin Name
1: Base
2: Emitter
3: Collector
Marking Symbol: D