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Publication date : October 2008 SJC00417AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB0792A
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Features
High collector-emitter voltage (Base open) V
CEO
Low noise voltage NV
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
–185 V
Collector-emitter voltage (Base open) V
CEO
–185 V
Emitter-base voltage (Collector open) V
EBO
–5 V
Collector current I
C
–50 mA
Peak collector current I
CP
–100 mA
Collector power dissipation P
C
200 mW
Junction temperature T
j
150
°C
Storage temperature T
stg
–55 to +150
°C
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= –100 mA, I
B
= 0 –185 V
Emitter-base voltage (Collector open) V
EBO
I
E
= –10 mA, I
C
= 0 –5 V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= –100 V, I
E
= 0 –1
mA
Forward current transfer ratio
*
h
FE
V
CE
= –5 V, I
C
= –10 mA 130 330
Collector-emitter saturation voltage V
CE(sat)
I
C
= –30 mA, I
B
= –3 mA –1 V
Transition frequency f
T
V
CB
= –10 V, I
E
= 10 mA, f = 200 MHz 200 MHz
Collector output capacitance
(Common base, input open circuited)
C
ob
V
CB
= –10 V, I
E
= 0, f = 1 MHz 4 pF
Noise voltage
NV
V
CB
= –10 V, I
C
= –1 mA, G
V
= 80 dB,
R
g
= 100 kΩ, Function = FLAT
150 mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank R S
h
FE
130 to 220 185 to 330
Merking symbol 2FR 2FS
Package
Code
Mini3-G1
Pin Name
1. Base
2. Emitter
3. Collector
Marking Symbol: 2F