Panasonic 2SB1220G Switch User Manual


 
Transistors
1
Publication date: April 2007 SJC00354AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1220G
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SD1821G
Features
High collector-emitter voltage (Base open) V
CEO
Low noise voltage NV
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
150 V
Collector-emitter voltage (Base open) V
CEO
150 V
Emitter-base voltage (Collector open) V
EBO
5V
Collector current I
C
50 mA
Peak collector current I
CP
100 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
55 to +150 °C
Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= 100 µA, I
B
= 0 150 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 0 5V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 100 V, I
E
= 0 1 µA
Forward current transfer ratio
*
h
FE
V
CE
= 5 V, I
C
= 10 mA 130 450
Collector-emitter saturation voltage V
CE(sat)
I
C
= 30 mA, I
B
= 3 mA 1V
Transition frequency f
T
V
CB
= 10 V, I
E
= 10 mA, f = 200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 4 pF
(Common base, input open circuited)
Noixe voltage NV V
CE
= 10 V, I
C
= 1 mA, G
V
= 80 dB 150 mV
R
g
= 100 k, Function = FLAT
Rank R S T
h
FE
130 to 220 185 to 330 260 to 450
Package
Code
SMini3-F2
Marking Symbol: I
Pin Name
1.Base
2.Emitter
3.Collector