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1
Publication date: April 2007 SJC00355AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1679G
Silicon PNP epitaxial planar type
For low-frequency amplification
■ Features
• Large collector output capacitance (Common base, input open cir-
cuited) C
ob
• Low collector-emitter saturation voltage V
CE(sat)
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−15 V
Collector-emitter voltage (Base open) V
CEO
−10 V
Emitter-base voltage (Collector open) V
EBO
−7V
Collector current I
C
− 0.5 A
Peak collector current I
CP
−1A
Collector power dissipation P
C
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Rank R S
h
FE1
130 to 220 180 to 350
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= −10 µA, I
E
= 0 −15 V
Collector-emitter voltage (Base open) V
CEO
I
C
= −1 mA, I
B
= 0 −10 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −7V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= −10 V, I
E
= 0 −100 nA
Forward current transfer ratio
*
1
h
FE1
*
2
V
CE
= −2 V, I
C
= − 0.5 A 130 350
h
FE2
V
CE
= −2 V, I
C
= −1 A 60
Collector-emitter saturation voltage
*
1
V
CE(sat)
I
C
= − 0.4 A, I
B
= −8 mA − 0.16 − 0.30 V
Base-emitter saturation voltage
*
1
V
BE(sat)
I
C
= − 0.4 A, I
B
= −8 mA − 0.8 −1.2 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 50 mA, f = 200 MHz 130 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 22 pF
(Common base, input open circuited)
■ Package
• Code
SMini3-F2
• Marking Symbol: 3V
• Pin Name
1.Base
2.Emitter
3.Collector