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Transistors
Publication date: March 2004 SJC00105BED
2SC1473, 2SC1473A
Silicon NPN triple diffusion planar type
For general amplification
2SC1473 complementary to 2SA1018
2SC1473A complementary to 2SA1767
■ Features
• High collector-emitter voltage (Base open) V
CEO
• High transition frequency f
T
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage
2SC1473 V
CBO
250 V
(Emitter open)
2SC1473A
300
Collector-emitter voltage
2SC1473 V
CEO
200 V
(Base open)
2SC1473A
300
Emitter-base voltage (Collector open) V
EBO
7V
Collector current I
C
70 mA
Peak collector current I
CP
100 mA
Collector power dissipation P
C
750 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
■ Electrical Characteristics T
a
= 25°C ± 3°C
5.0
±0.2
0.7
±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
123
+0.6
–0.2
4.0
±0.2
5.1
±0.2
12.9
±0.5
2.3
±0.2
0.7
±0.2
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A TO-92-B1 Package
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage
2SA1473 V
CEO
I
C
= 100 µA, I
B
= 0 200 V
(Base open)
2SA1473A
300
Emitter-base voltage (Collector open) V
EBO
I
E
= 1 µA, I
C
= 07V
Collector-emitter cutoff
2SA1473 I
CEO
V
CE
= 120 V, T
a
= 60°C, I
B
= 01µA
current (Base open)
2SA1473A
V
CE
= 120 V, I
B
= 01
Forward current transfer ratio
*
h
FE
V
CE
= 10 V, I
C
= 5 mA 60 220
Collector-emitter saturation voltage V
CE(sat)
I
C
= 50 mA, I
B
= 5 mA 1.2 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −10 mA, f = 200 MHz 50 80 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 10 pF
(Common base, input open circuited)
Rank Q R
h
FE
60 to 150 100 to 220
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).