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Transistors
Publication date: March 2003 SJC00112BED
2SC2295
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1022
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency f
T
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
30 V
Collector-emitter voltage (Base open) V
CEO
20 V
Emitter-base voltage (Collector open) V
EBO
5V
Collector current I
C
30 mA
Collector power dissipation P
C
200 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 10 V, I
E
= 0 0.1 µA
Forward current transfer ratio
*
h
FE
V
CB
= 10 V, I
E
= −1 mA 70 220
Transition frequency f
T
V
CB
= 10 V, I
E
= −1 mA, f = 200 MHz 150 250 MHz
Noise figure NF V
CB
= 10 V, I
E
= −1 mA, f = 5 MHz 2.8 4.0 dB
Reverse transfer impedance Z
rb
V
CB
= 10 V, I
E
= −1 mA, f = 2 MHz 22 50 Ω
Reverse transfer capacitance C
re
V
CB
= 10 V, I
E
= −1 mA, f = 10.7 MHz 0.9 1.5 pF
(Common emitter)
Unit: mm
■ Electrical Characteristics T
a
= 25°C ± 3°C
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
0.40
+0.10
–0.05
(0.65)
1.50
+0.25
–0.05
2.8
+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4±0.2
5˚
10˚
0 to 0.1
1.1
+0.2
–0.1
1.1
+0.3
–0.1
Marking Symbol: V
Rank B C
h
FE
70 to 140 110 to 220
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).