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Publication date : October 2008 SJC00422AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2406
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SA1035
Features
Low noise voltage NV
High forward current transfer ratio h
FE
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
55 V
Collector-emitter voltage (Base open) V
CEO
55 V
Emitter-base voltage (Collector open) V
EBO
5 V
Collector current I
C
50 mA
Peak collector current I
CP
100 mA
Collector power dissipation P
C
200 mW
Junction temperature T
j
150
°C
Storage temperature T
stg
–55 to +150
°C
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 mA, I
E
= 0 55 V
Collector-emitter voltage (Base open) V
CEO
I
C
= 2 mA, I
B
= 0 55 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 mA, I
C
= 0 5 V
Base-emitter voltage V
BE
V
CE
= 1 V, I
C
= 100 mA 0.7 1.0 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 10 V, I
E
= 0 0.1
mA
Collector-emitter cutoff current (Base open) I
CEO
V
CB
= 10 V, I
B
= 0 1
mA
Forward current transfer ratio
*
h
FE
V
CE
= 5 V, I
C
= 2 mA 180 700
Collector-emitter saturation voltage V
CE(sat)
I
C
= 100 mA, I
B
= 10 mA 0.6 V
Transition frequency f
T
V
CB
= 5 V, I
E
= –2 mA, f = 200 MHz 200 MHz
Noise voltage
NV
V
CB
= 10 V, I
C
= 1 mA, G
V
= 80 dB,
R
g
= 100 kΩ, Function = FLAT
110 mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank R S T
h
FE
180 to 360 260 to 520 360 to 700
Merking symbol TR TS TT
Package
Code
Mini3-G1
Pin Name
1. Base
2. Emitter
3. Collector
Marking Symbol: T