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Publication date: February 2003 SJC00125BED
2SC3130
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
• High transition frequency f
T
• Small collector output capacitance (Common base, input open cir-
cuited) C
ob
and reverse transfer capacitance (Common emitter) C
rb
• Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine pack-
ing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
15 V
Collector-emitter voltage (Base open) V
CEO
10 V
Emitter-base voltage (Collector open) V
EBO
3V
Collector current I
C
50 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= 2 mA, I
B
= 010V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 03V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 10 V, I
E
= 01µA
Forward current transfer ratio
*
1
h
FE
V
CE
= 4 V, I
C
= 5 mA 75 220
h
FE
ratio
*
2
∆h
FE
h
FE2
: V
CE
= 4 V, I
C
= 100 µA 0.75 1.60
h
FE1
: V
CE
= 4 V, I
C
= 5 mA
Collector-emitter saturation voltage V
CE(sat)
I
C
= 20 mA, I
B
= 4 mA 0.5 V
Transition frequency f
T
V
CB
= 4 V, I
E
= −5 mA, f = 200 MHz 1.4 1.9 2.5 GHz
Collector output capacitance C
ob
V
CB
= 4 V, I
E
= 0, f = 1 MHz 1.4 pF
(Common base, input open circuited)
Reverse transfer capacitance C
rb
V
CB
= 4 V, I
E
= 0, f = 1 MHz 0.45 pF
(Common emitter)
Collector-base parameter r
bb
' • C
C
V
CB
= 4 V, I
E
= −5 mA, f = 31.9 MHz 11 ps
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Rank classification
0.40
+0.10
–0.05
(0.65)
1.50
+0.25
–0.05
2.8
+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5˚
10˚
0 to 0.1
1.1
+0.2
–0.1
1.1
+0.3
–0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Rank P Q
h
FE
75 to 130 110 to 220
Marking Symbol: 1S
*
2: ∆h
FE
= h
FE2
/
h
FE1
This product complies with the RoHS Directive (EU 2002/95/EC).