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Publication date: February 2004 SJC00136CED
2SC3757
Silicon NPN epitaxial planar type
For high-speed switching
■ Features
• Low collector-emitter saturation voltage V
CE(sat)
• Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 15 V, I
E
= 0 0.1 µA
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 4 V, I
C
= 0 0.1 µA
Forward current transfer ratio
*
h
FE
V
CE
= 1 V, I
C
= 10 mA 60 200
Collector-emitter saturation voltage V
CE(sat)
I
C
= 10 mA, I
B
= 1 mA 0.17 0.25 V
Base-emitter saturation voltage V
BE(sat)
I
C
= 10 mA, I
B
= 1 mA 1.0 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −10 mA, f = 200 MHz 450 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 2 6 pF
(Common base, input open circuited)
Turn-on time t
on
Refer to the switching time measurement
17 ns
Turn-off time t
off
circuit 17 ns
Storage time t
stg
10 ns
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
40 V
Collector-emitter voltage (E-B short) V
CES
40 V
Emitter-base voltage (Collector open) V
EBO
5V
Collector current I
C
100 mA
Peak collector current I
CP
300 mA
Collector power dissipation P
C
200 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Marking Symbol: 2Y
0.40
+0.10
–0.05
(0.65)
1.50
+0.25
–0.05
2.8
+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5˚
10˚
0 to 0.1
1.1
+0.2
–0.1
1.1
+0.3
–0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Rank Q R
h
FE
60 to 120 90 to 200
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).