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Publication date: February 2003 SJC00144BED
2SC3934
Silicon NPN epitaxial planar type
For high-frequency wide-band low-noise amplification
■ Features
• High transition frequency f
T
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 10 V, I
E
= 0 100 nA
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 2 V, I
C
= 01µA
Forward current transfer ratio h
FE
V
CE
= 10 V, I
C
= 10 mA 40
Transition frequency f
T
V
CE
= 10 V, I
C
= 10 mA, f = 0.8 GHz 4.5 GHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 1.2 pF
(Common base, input open circuited)
Forward transfer gain S
21e
2
V
CE
= 10 V, I
C
= 20 mA, f = 0.8 GHz 9 12 dB
Maximum unilateral power gain G
UM
V
CE
= 10 V, I
C
= 20 mA, f = 0.8 GHz 12 14 dB
Noise figure NF V
CE
= 10 V, I
C
= 5 mA, f = 0.8 GHz 1.3 2.5 dB
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
15 V
Collector-emitter voltage (Base open) V
CEO
12 V
Emitter-base voltage (Collector open) V
EBO
2.5 V
Collector current I
C
30 mA
Peak collector current I
CP
50 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Marking Symbol: 1U
2.1±0.1
1.3±0.1
0.3
+0.1
–0.0
2.0±0.2
1.25±0.10 (0.425)
1
3
2
(0.65)
(0.65)
0.2±0.1
0.9±0.10 to 0.1
0.9
+0.2
–0.1
0.15
+0.10
–0.05
5˚
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
This product complies with the RoHS Directive (EU 2002/95/EC).