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Publication date: April 2007 SJC00363AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3937G
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
■ Features
• Low noise figure NF
• High forward transfer gain S
21e
2
• High transition frequency f
T
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 15 V, I
E
= 01µA
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 1 V, I
C
= 01µA
Forward current transfer ratio h
FE1
V
CE
= 8 V, I
C
= 20 mA 50 300
h
FE2
V
CE
= 1 V, I
C
= 3 mA 80 280
Transition frequency f
T
V
CE
= 8 V, I
C
= 20 mA, f = 0.8 GHz 6 GHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 0.7 1.2 pF
(Common base, input open circuited)
Forward transfer gain S
21e
2
V
CE
= 8 V, I
C
= 20 mA, f = 0.8 GHz 13 dB
Maximum unilateral power gain G
UM
V
CE
= 8 V, I
C
= 20 mA, f = 0.8 GHz 14 dB
Noise figure NF V
CE
= 8 V, I
C
= 7 mA, f = 0.8 GHz 1.0 1.7 dB
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
15 V
Collector-emitter voltage (Base open) V
CEO
10 V
Emitter-base voltage (Collector open) V
EBO
2V
Collector current I
C
80 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
■ Package
• Code
SMini3-F2
• Marking Symbol: 2W
• Pin Name
1.Base
2.Emitter
3.Collector