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Publication date: January 2003 SJC00282BED
2SC4691J
Silicon NPN epitaxial planar type
For high-speed switching
■ Features
• Low collector-emitter saturation voltage V
CE(sat)
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 40 V, I
E
= 0 0.1 µA
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 4 V, I
C
= 0 0.1 µA
Forward current transfer ratio
*
h
FE
V
CE
= 1 V, I
C
= 10 mA 60 200
Collector-emitter saturation voltage V
CE(sat)
I
C
= 10 mA, I
B
= 1 mA 0.17 0.25 V
Base-emitter saturation voltage V
BE(sat)
I
C
= 10 mA, I
B
= 1 mA 1.0 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −10 mA, f = 200 MHz 450 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 2 6 pF
(Common base, input open circuited)
Turn-on time t
on
Refer to the measurement circuit 17 ns
Turn-off time t
off
17 ns
Storage time t
stg
10 ns
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
40 V
Collector-emitter voltage (E-B short) V
CES
40 V
Emitter-base voltage (Collector open) V
EBO
5V
Collector current I
C
100 mA
Peak collector current I
CP
300 mA
Collector power dissipation P
C
125 mW
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
Marking Symbol: 2Y
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank Q R No-rank
h
FE
60 to 120 90 to 200 60 to 200
Product of no-rank is not classified and have no indication for rank.
0.27
±0.02
3
12
0.12
+0.03
–0.01
0.80
±0.05
(0.80)
0.85
1.60
±0.05
0 to 0.02
0.10 max.
0.70
+0.05
–0.03
(0.375)
5˚
5˚
1.60
+0.05
–0.03
1.00
±0.05
(0.50)(0.50)
+0.05
–0.03
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).