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Publication date: May 2007 SJC00368AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4835G
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
■ Features
• Low noise figure NF
• High forward transfer gain S
21e
2
• High transition frequency f
T
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 015V
Collector-emitter voltage (Base open) V
CEO
I
C
= 100 µA, I
B
= 010 V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 10 V, I
E
= 01µA
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 2 V, I
C
= 01µA
Forward current transfer ratio
*
1, 2
h
FE
V
CE
= 8 V, I
C
= 20 mA 50 200
Transition frequency f
T
V
CE
= 8 V, I
C
= 15 mA, f = 800 MHz 5 6 GHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 0.7 1.2 pF
(Common base, input open circuited)
Forward transfer gain S
21e
2
V
CE
= 8 V, I
C
= 15 mA, f = 800 MHz 11 14 dB
Maximum unilateral power gain G
UM
V
CE
= 8 V, I
C
= 15 mA, f = 800 MHz 15 dB
Noise figure NF V
CE
= 8 V, I
C
= 7 mA, f = 800 MHz 1.3 2.0 dB
■ Electrical Characteristics T
a
= 25°C ± 3°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
15 V
Collector-emitter voltage (Base open) V
CEO
10 V
Emitter-base voltage (Collector open) V
EBO
2V
Collector current I
C
80 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Rank Q R S
h
FE
50 to 100 80 to 130 100 to 200
■ Package
•
Code
SMini3-F2
•
Marking Symbol: 3M
•
Pin Name
1: Base
2: Emitter
3: Collector