Panasonic 2SC5609G Network Card User Manual


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Transistors
Publication date : November 2008 SJC00427BED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5609G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2021G
Features
High forward current transfer ratio h
FE
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
60 V
Collector-emitter voltage (Base open) V
CEO
50 V
Emitter-base voltage (Collector open) V
EBO
7 V
Collector current I
C
100 mA
Peak collector current I
CP
200 mA
Collector power dissipation P
C
100 mW
Junction temperature T
j
125
°C
Storage temperature T
stg
–55 to +125
°C
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 mA, I
E
= 0 60 V
Collector-emitter voltage (Base open) V
CEO
I
C
= 2 mA, I
B
= 0 50 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 mA, I
C
= 0 7 V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 20 V, I
E
= 0 0.1
mA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= 10 V, I
B
= 0 100
mA
Forward current transfer ratio
h
FE1
V
CE
= 10 V, I
C
= 2 mA 180 390
h
FE2
*
V
CE
= 2 V, I
C
= 100 mA 90
Collector-emitter saturation voltage V
CE(sat)
I
C
= 100 mA, I
B
= 10 mA 0.1 0.3 V
Transition frequency f
T
V
CB
= 10 V, I
E
= –2 mA, f = 200 MHz 80 MHz
Collector output capacitance
(Common base, input open circuited)
C
re
V
CB
= 10 V, I
E
= 0, f = 1 MHz 3.5 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Pulse measurement
Package
Code
SSSMini3-F2
Pin Name
1. Base
2. Emitter
3. Collector
Marking Symbol: 3F
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