Filter
Top Products
Transistors
1
Publication date: June 2007 SJC00369AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5632G
Silicon NPN epitaxial planar type
For high-frequency amplification and switching
■ Features
• High transition frequency f
T
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 100 µA, I
E
= 015 V
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 2 V, I
C
= 02µA
Forward current transfer ratio h
FE
V
CE
= 4 V, I
C
= 2 mA 100 350
h
FE
ratio
*
∆h
FE
h
FE2
: V
CE
= 4 V, I
C
= 100 µA 0.6 1.5
h
FE1
: V
CE
= 4 V, I
C
= 2 mA
Collector-emitter saturation voltage V
CE(sat)
I
C
= 20 mA, I
B
= 4 mA 0.1 V
Transition frequency f
T
V
CE
= 5 V, I
C
= 15 mA, f = 200 MHz 0.6 1.1 GHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 1.0 1.6 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
15 V
Collector-emitter voltage (Base open) V
CEO
8V
Emitter-base voltage (Collector open) V
EBO
3V
Collector current I
C
50 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: ∆h
FE
= h
FE2
/ h
FE1
■ Package
•
Code
SMini3-F2
•
Marking Symbol: 2R
•
Pin Name
1: Base
2: Emitter
3: Collector