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Publication date: December 2002 SJC00287AED
Transistors
■ Electrical Characteristics T
a
= 25°C ± 3°C
2SC5829
Silicon NPN epitaxial planar type
For high speed switching
■ Features
• Allowing the small current and low voltage operation
• High transition frequency f
T
• Suitable for high-density mounting and downsizing of the equip-
ment for Ultraminiature leadless package
0.6 mm × 1.0 mm (height 0.39 mm)
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 10 V, I
E
= 01µA
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 1.5 V, I
C
= 01µA
Forward current transfer ratio h
FE
V
CE
= 1 V, I
C
= 1 mA 100 200
Transition frequency f
T
V
CE
= 1 V, I
C
= 1 mA, f = 0.8 GHz 4 GHz
Collector output capacitance C
ob
V
CB
= 1 V, I
E
= 0, f = 1 MHz 0.4 pF
(Common base, input open circuited)
Forward transfer gain S
21e
2
V
CE
= 1 V, I
C
= 1 mA, f = 0.8 GHz 6 dB
Maximum unilateral power gain G
UM
V
CE
= 1 V, I
C
= 1 mA, f = 0.8 GHz 15 dB
Noise figure NF V
CE
= 1 V, I
C
= 1 mA, f = 0.8 GHz 3.5 dB
Unit: mm
Marking Symbol: X
0.60
±0.05
1.00
±0.05
2
1
3
0.39
+0.01
−0.03
0.25
±0.05
0.25
±0.05
0.50
±0.05
0.65
±0.01
0.15
±0.05
2
1
0.35
±0.01
0.05
±0.03
0.05
±0.03
3
1: Base
2: Emitter
3: Collector
ML3-N2 Package
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
10 V
Collector-emitter voltage (Base open) V
CEO
7V
Emitter-base voltage (Collector open) V
EBO
2V
Collector current I
C
10 mA
Collector power dissipation P
C
50 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
This product complies with the RoHS Directive (EU 2002/95/EC).