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Publication date: February 2003 SJC00216BED
2SD1328
Silicon NPN epitaxial planar type
For low-voltage output amplification
For muting
For DC-DC converter
■ Features
• Low collector-emitter saturation voltage V
CE(sat)
• Low ON resistance R
on
• High foward current transfer ratio h
FE
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
25 V
Collector-emitter voltage (Base open) V
CEO
20 V
Emitter-base voltage (Collector open) V
EBO
12 V
Collector current I
C
0.5 A
Peak collector current I
CP
1 A
Collector power dissipation P
C
200 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 025V
Collector-emitter voltage (Base open) V
CEO
I
C
= 1 mA, I
B
= 020V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 012V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 25 V, I
E
= 0 100 nA
Forward current transfer ratio
*
1,2
h
FE
V
CE
= 2 V, I
C
= 0.5 A 200 800
Collector-emitter saturation voltage
*
1
V
CE(sat)
I
C
= 0.5 A, I
B
= 20 mA 0.13 0.40 V
Base-emitter saturation voltage
*
1
V
CE(sat)
I
C
= 0.5 A, I
B
= 50 mA 1.2 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −50 mA, f = 200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 10 pF
ON resistance
*
3
R
ON
1.0 Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: 1D
Rank R S T No-rank
h
FE
200 to 350 300 to 500 400 to 800 200 to 800
Marking symbol 1DR 1DS 1DT 1D
0.40
+0.10
–0.05
(0.65)
1.50
+0.25
–0.05
2.8
+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4±0.2
5˚
10˚
0 to 0.1
1.1
+0.2
–0.1
1.1
+0.3
–0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
*
3: R
on
Measuremet circuit
V
V
1 kΩ
R
on
=
V
B
× 1
000 (Ω)
V
A
− V
B
f = 1 kHz
V = 0.3 V
V
B
I
B
= 1 mA
V
A
Product of no-rank is not classified and have no marking symbol for rank.
This product complies with the RoHS Directive (EU 2002/95/EC).