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Publication date: October 2008 SJC00414AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1478A
Silicon NPN epitaxial planar type darlington
For low frequency amplification
Features
Forward current transfer ratio h
FE
is designed high, which is appropriate to the
driver circuit of motors and printer hammer.
A shunt resistor is omitted from the driver.
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
60 V
Collector-emitter voltage (Base open) V
CEO
50 V
Emitter-base voltage (Collector open) V
EBO
5 V
Collector current I
C
500 mA
Peak collector current I
CP
750 mA
Collector power dissipation P
C
200 mW
Junction temperature T
j
150
°C
Storage temperature T
stg
-55 to +150
°C
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 100 mA, I
E
= 0 60 V
Collector-emitter voltage (Base open) V
CEO
I
C
= 1 mA, I
B
= 0 50 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 100 mA, I
C
= 0 5 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 25 V, I
E
= 0 100 nA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= 4 V, I
C
= 0 100 nA
Forward current transfer ratio
*
1,
*
2
h
FE
V
CE
= 10 V, I
C
= 500 mA 4
000 20
000
Collector-emitter saturation voltage
*
1
V
CE(sat)
I
C
= 500 mA, I
B
= 0.5 mA 2.5 V
Base-emitter saturation voltage
*
1
V
BE(sat)
I
C
= 500 mA, I
B
= 0.5 mA 3.0 V
Transition frequency f
T
V
CB
= 10 V, I
E
= -50 mA, f = 200 MHz 200 MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Rank Q R
h
FE
4
000 to 10
000 8
000 to 20
000
Package
Code
Mini3-G1
Pin Name
1: Base
2: Emitter
3: Collector
Marking Symbol: 2O
Internal Connection
B
C
E