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Schottky Barrier Diodes (SBD)
Publication date: November 2005 SKH00150AED 1
MA24D50
Silicon epitaxial planar type
For rectification
Features
Forward current (Average) I
F(AV)
= 3.0 A rectification is possible
Low forward voltage V
F
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage
V
R
40 V
Maximum peak reverse voltage
V
RM
40 V
Forward current (Average)
*
1
I
F(AV)
3.0 A
Non-repetitive peak forward surge current
*
2
I
FSM
60 A
Junction temperature
T
j
150
°C
Storage temperature
T
stg
–40 to +150
°C
Note)
*
1: Mounted on an alumina PC board
*
2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage
V
F
I
F
= 3.0 A 0.46 0.51 V
Reverse current
I
R
V
R
= 40 V 40 200
µA
Terminal capacitance
C
t
V
R
= 10 V, f = 1 MHz 105 pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA, I
rr
= 10 mA,
R
L
= 100 Ω
33 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3.
*
: t
rr
measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
=
I
R
= 100 mA
R
L
=
100 Ω
10%
Input Pulse Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Unit : mm
1 : Anode
2 : Cathode TMiniP2-F1 Package
2.40±0.10 0.15±0.05
1
2
1.75±0.05
4.70±0.10
3.80±0.050.450±0.05
5°
0 to 0.40
0 to 0.03
0.90MAX
5°
Marking Symbol: 5R
This product complies with the RoHS Directive (EU 2002/95/EC).