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Schottky Barrier Diodes (SBD)
Publication date: March 2007 SKH00160AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA24D54
Silicon epitaxial planar type
For rectification
Features
Forward current (Average) I
F(AV)
= 3.0 A rectification is possible
Small reverse current I
R
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
30 V
Maximum peak reverse voltage V
RM
30 V
Forward current (Average)
*
I
F(AV)
3.0 A
Non-repetitive peak forward surge
current
I
FSM
60 A
Junction temperature T
j
150
°C
Storage temperature T
stg
–40 to +150
°C
Note)
*
: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward current V
F
I
F
= 3.0 A 0.37 V
Reverse current I
R
V
R
= 30 V 2.0 mA
Terminal capacitance C
t
V
R
= 10 V, f = 1 MHz 125 pF
Reverse recovery time
*
1
t
rr
I
F
= I
R
= 100 mA, I
rr
= 10 mA
R
L
= 100 W
40 ns
Thermal resistance
R
th(j-a)
*
2
55
°C/W
R
th(j-a)
*
3
210
R
th(j-l)
10
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3.
*
1: t
rr
test Circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= I
R
= 100 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
*
2: Mounted on an alumina PC board (board: 50 mm × 50 mm × 0.8 t, soldering land: 1.4 mm × 2.1 mm)
*
3: With a glass epoxy PC board (board: 50 mm × 20 mm × 1.0 t, soldering land: 2.0 mm × 2.0 mm + 20 mm × 0.8 mm)
Unit: mm
1: Anode
2: Cathode TMiniP2-F1 Package
2.40±0.10 0.15±0.05
1
2
1.75±0.05
4.70±0.10
3.80±0.050.450±0.05
5°
0 to 0.40
0 to 0.03
0.90 max.
5°
Marking Symbol: 4S