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Publication date: March 2004 SKG00001BED
Band Switching Diodes
Marking Symbol: C
MA27077
Silicon epitaxial planar type
For band switching
■ Features
• Low forward dynamic resistance r
f
• Less voltage dependence of diode capacitance C
D
• SSS-Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
■ Absolute Maximum Ratings T
a
= 25°C
1: Anode
2: Cathode
SSSMini2-F1 Package
Parameter Symbol Rating Unit
Reverse voltage V
R
35 V
Forward current I
F
100 mA
Operating ambient temperature
*
T
opr
−25 to +85 °C
Storage temperature T
stg
−55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 100 mA 0.92 1.00 V
Reverse current I
R
V
R
= 33 V 0.01 100.00 nA
Diode capacitance C
D
V
R
= 6 V, f = 1 MHz 0.9 1.2 pF
Forward dynamic resistance
*
r
f
I
F
= 2 mA, f = 100 MHz 0.65 0.85 Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note)
*
: Maximum ambient temperature during operation.
5˚
5˚
0.27
2
1
1.40
±0.05
0.52
±0.03
1.00
±0.05
0.60
±0.05
0.15 min.
0 to 0.01
0.15 min.0.15 max.
+0.05
–0.02
0.10
+0.05
–0.02
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.
*
: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
This product complies with the RoHS Directive (EU 2002/95/EC).