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Fast Recovery Diodes (FRD)
Publication date: December 2008 SKJ00024AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2DF62
Silicon Mesa type
For high frequency rectification
Features
Super high speed switching characteristic: t
rr
= 15 ns (typ.)
Low noise type
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Repetitive peak reverse voltage V
RRM
600 V
Non-repetitive peak reverse surge voltage V
RSM
600 V
Forward current (Average)
*
1
I
F(AV)
10 A
Non-repetitive peak forward surge current
*
2
I
FSM
40 A
Junction temperature T
j
150
°C
Storage temperature T
stg
-40 to +150
°C
Note)
*
1: T
C
= 25°C
*
2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 10 A 1.8 2.5 V
Reverse current I
RRM
V
RRM
= 600 V 30
mA
Reverse recovery time
*
t
rr
I
F
= 0.5 A, I
R
= 1.0 A
I
rr
= 0.25 A
15 25 ns
Thermal resistance (j-c) R
th(j-c)
3.0
°C/W
Thermal resistance (j-a) R
th(j-a)
63
°C/W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of
current from the operating equipment.
3.
*
: t
rr
measurement circuit
50 Ω 50 Ω
5.5 Ω
D.U.T.
I
F
I
R
0.25 × I
R
t
rr
Package
Code
TO-220D-B1
Pin Name
1: Cathode
2: Anode
Marking Symbol: MA2DF62