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Switching Diodes
1
Publication date: March 2004 SKF00011BED
Note)
*
:t = 1 s
MA2J111 (MA111)
Silicon epitaxial planar type
For switching circuits
■ Features
• Allowing high-density mounting
• Short reverse recovery time t
rr
• Small terminal capacitance C
t
• High breakdown voltage: V
R
= 80 V
■ Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter Symbol Rating Unit
Reverse voltage V
R
80 V
Maximum peak reverse voltage V
RM
80 V
Forward current I
F
100 mA
Peak forward current I
FM
225 mA
Non-repetitive peak forward I
FSM
500 mA
surge current
*
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 100 mA 0.95 1.20 V
Reverse voltage V
R
I
R
= 100 µA80V
Reverse current I
R
V
R
= 75 V 100 nA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 0.6 1.2 pF
Reverse recovery time
*
t
rr
I
F
= 10 mA, V
R
= 6 V 3 ns
I
rr
= 0.1 I
R
, R
L
= 100 Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
Marking Symbol: 1B
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.
*
: t
rr
measurement circuit
Note) The part number in the parenthesis shows conventional part number.
1: Anode
2: Cathode
EIAJ: SC-76 SMini2-F1 Package
5˚
5˚
1.25
±0.1
0.7
±0.1
2.5
±0.2
1.7
±0.1
0.4
±0.1
0 to 0.1
(0.15)
0.16
0.5
±0.1
1
2
+0.1
–0.06
0.35
±0.1
0 to 0.1
This product complies with the RoHS Directive (EU 2002/95/EC).