Panasonic MA2J1120G Network Card User Manual


 
Switching Diodes
1
Publication date: October 2007 SKF00073AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2J1120G
Silicon epitaxial planar type
For switching circuits
Features
Allowing high-density mounting
Ensuring the forward current (Average) capacity I
F(AV)
= 200 mA
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
40 V
Maximum peak reverse voltage V
RM
40 V
Forward current (Average)
*
1
I
F(AV)
200 mA
Peak forward current I
FM
600 mA
Non-repetitive peak forward I
FSM
1A
surge current
*
2
Junction temperature T
j
150 °C
Storage temperature T
stg
55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 200 mA 1.1 V
Reverse current I
R1
V
R
= 15 V 50 nA
I
R2
V
R
= 35 V 500
I
R3
V
R
= 35 V, T
a
= 100°C 100 µA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 4 pF
Reverse recovery time
*
t
rr
I
F
= 10 mA, V
R
= 6 V 10 ns
I
rr
= 0.1 I
R
, R
L
= 100
Electrical Characteristics T
a
= 25°C ± 3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50
Wave Form Analyzer
(SAS-8130)
R
i
= 50
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100
10%
Input Pulse Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.
*
: t
rr
measurement circuit
Note)
*
1: With a printed-circuit board
*
2: t = 1 s
Package
Code
SMini2-F3
Pin Name
1: Anode
2: Cathode
Marking Symbol: 1C