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Rectifier Diodes
1
Publication date: March 2004 SKC00001BED
MA2J114 (MA114)
Silicon epitaxial planar type
For small power rectification
■ Features
• S-mini type package, allowing high-density mounting
• High reverse voltage V
R
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 200 mA 1.2 V
Reverse current I
R
V
R
= 150 V 200 nA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 4.5 pF
■ Electrical Characteristics T
a
= 25°C ± 3°C
Parameter Symbol Rating Unit
Reverse voltage V
R
150 V
Maximum peak reverse voltage V
RM
150 V
Output current I
O
200 mA
Repetitive peak forward current I
FRM
600 mA
Non-repetitive peak forward I
FSM
1A
surge current
*
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Note)
*
: t = l s
Marking Symbol: 1E
Note) The part number in the parenthesis shows conventional part number.
5˚
5˚
1.25
±0.1
0.7
±0.1
2.5
±0.2
1.7
±0.1
0.4
±0.1
0 to 0.1
(0.15)
0.16
0.5
±0.1
1
2
+0.1
–0.06
0.35
±0.1
0 to 0.1
Unit: mm
1: Anode
2: Cathode
EIAJ: SC-76 SMini2-F1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 3 MHz.
This product complies with the RoHS Directive (EU 2002/95/EC).