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Switching Diodes
1
Publication date: March 2004 SKF00014BED
MA2J116 (MA116)
Silicon epitaxial planar type
For general purpose
■ Features
• Allowing high-density mounting
• Soft recovery characteristic: t
rr
= 100 ns
■ Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter Symbol Rating Unit
Reverse voltage V
R
40 V
Maximum peak reverse voltage V
RM
40 V
Forward current (Average) I
F(AV)
100 mA
Peak forward current I
FM
225 mA
Non-repetitive peak forward I
FSM
500 mA
surge current
*
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 100 mA 1.2 V
Reverse voltage V
R
I
R
= 100 µA35V
Reverse current I
R1
V
R
= 15 V 5 nA
I
R2
V
R
= 40 V 10
I
R3
V
R
= 35 V, T
a
= 100°C 100 µA
Terminal capacitance C
t
V
R
= 6 V, f = 1 MHz 1.0 2.0 pF
Forward dynamic resistance
*
1
r
f
I
F
= 3 mA, f = 30 MHz 3.6 Ω
Reverse recovery time
*
2
t
rr
I
F
= 10 mA, V
R
= 6 V 100 ns
I
rr
= 0.1 I
R
, R
L
= 100 Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
Marking Symbol: 1H
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3.
*
1: YHP 4191A RF IMPEDANCE ANALYZER
*
2: t
rr
measurement circuit
Note) The part number in the parenthesis shows conventional part number.
1: Anode
2: Cathode
EIAJ: SC-76 SMini2-F1 Package
5˚
5˚
1.25
±0.1
0.7
±0.1
2.5
±0.2
1.7
±0.1
0.4
±0.1
0 to 0.1
(0.15)
0.16
0.5
±0.1
1
2
+0.1
–0.06
0.35
±0.1
0 to 0.1
Note)
*
:t = 1 s
This product complies with the RoHS Directive (EU 2002/95/EC).