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Schottky Barrier Diodes (SBD)
1
Publication date: October 2007 SKH00170AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2J7270G
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
• V
R
= 50 V is guaranteed
• I
F(AV)
= 200 mA rectification is possible
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
50 V
Repetitive peak reverse voltage V
RRM
50 V
Forward current (Average) I
F(AV)
200 mA
Peak forward current I
FM
300 mA
Non-repetitive peak forward I
FSM
1A
surge current
*
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F1
I
F
= 30 mA 0.36 V
V
F2
I
F
= 200 mA 0.55 V
Reverse current I
R
V
R
= 50 V 200 µA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 30 pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA 3.0 ns
I
rr
= 10 mA, R
L
= 100 Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 1 GHz. 4.
*
: t
rr
measurement circuit
Note)
*
: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Package
•
Code
SMini2-F3
•
Pin Name
1: Anode
2: Cathode
■ Marking Symbol: 2F