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Schottky Barrier Diodes (SBD)
1
Publication date: April 2004 SKH00057BED
MA3J744 (MA744)
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
•
High-density mounting is possible
•
Forward current (Average) I
F(AV)
= 200 mA rectification is possible
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
30 V
Repetitive peak reverse voltage V
RRM
30 V
Forward current (Average) I
F(AV)
200 mA
Peak forward current I
FM
300 mA
Non-repetitive peak forward I
FSM
1A
surge current
*
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Marking Symbol: M1M
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 200 mA 0.55 V
Reverse current I
R
V
R
= 30 V 50 µA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 30 pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA 3.0 ns
I
rr
= 0.1 I
R
, R
L
= 100 Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
Internal Connection
12
3
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
1 : Anode
2 : N.C.
3 : Cathode
EIAJ: SC-79 SMini3-F1 Package
Unit: mm
0.3
2.0
±0.2
1.3
±0.1
(0.65)
1
3
2
(0.65)
0.9
±0.1
2.1
±0.1
1.25
±0.1
0 to 0.1
(0.15)
(0.425)
5˚
5˚
+0.1
–0
0.15
+0.1
–0.05
Note)
*
:t = 1 s
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
4.
*
:t
rr
measurement circuit
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).