Panasonic MA3S1330G Network Card User Manual


 
Switching Diodes
1
Publication date: October 2007 SKF00086AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3S1330G
Silicon epitaxial planar type
For switching circuits
Features
Two isolated elements contained in one package, allowing high-
density mounting
Two diodes are connected in series in the package
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 100 mA 1.2 V
Reverse voltage V
R
I
R
= 100 µA80V
Reverse current I
R
V
R
= 75 V 100 nA
Terminal capacitance C
t
*
1
V
R
= 0 V, f = 1 MHz 5.5 pF
C
t
*
2
3.0
Reverse recovery time
*
3
t
rr
*
1
I
F
= 10 mA, V
R
= 6 V 150 ns
t
rr
*
2
I
rr
= 0.1 I
R
, R
L
= 100 9
Electrical Characteristics T
a
= 25°C ± 3°C
1
3
2
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50
Wave Form Analyzer
(SAS-8130)
R
i
= 50
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100
10%
Input Pulse Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.
*
1: Between pins 2 and 3
*
2: Between pins 1 and 3
*
3: t
rr
measurement circuit
Parameter Symbol Rating Unit
Reverse voltage V
R
80 V
Maximum peak reverse voltage
V
RM
80 V
Forward current Single I
F
100 mA
Series 65
Peak forward
Single I
FM
200 mA
current
Series 130
Junction temperature T
j
150 °C
Storage temperature T
stg
55 to +150 °C
Package
Code
SSMini3-F3
Pin Name
1:Anode 1
2:Cathode 2
3:Cathode 1
Anode 2
Marking Symbol: MP
Internal Connection