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Schottky Barrier Diodes (SBD)
1
Publication date: February 2005 SKH00067CED
MA3SE02
Silicon epitaxial planar type
For cellular phone
■ Features
•
High-frequency wave detection is possible
•
Low forward voltage V
F
•
Small terminal capacitance C
t
■ Absolute Maximum Ratings T
a
= 25°C
Marking Symbol: M6B
■ Electrical Characteristics T
a
= 25°C ± 3°C
Internal Connection
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F1
I
F
= 1 mA 0.40 V
V
F2
I
F
= 35 mA 1.0
Reverse current I
R
V
R
= 15 V 200 nA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 1.2 pF
Forward dynamic resistance r
f
I
F
= 5 mA 9 Ω
12
3
1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
EIAJ: SC-81 SSMini3-F2 Package
Unit: mm
0.28
±0.05
3
12
0.28
±0.05
(0.80)
1.60
+0.05
–0.03
0.12
+0.05
–0.02
0.60
+0.05
–0.03
(0.80)
(0.51) (0.51)
0 to 0.1
(0.15)
3˚
(0.44)(0.44)
0.88
(0.375)
+0.05
–0.03
0.80
±0.05
(0.80)
1.60
±0.05
3˚
Parameter Symbol Rating Unit
Reverse voltage V
R
20 V
Maximum peak reverse voltage V
RM
20 V
Forward current Single I
F
35 mA
Series 25
Peak forward Single I
FM
100 mA
current Series 70
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
This product complies with the RoHS Directive (EU 2002/95/EC).