Panasonic MA4X159A Network Card User Manual


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Switching Diodes
1
Publication date: March 2004 SKF00043BED
MA4X159A (MA159A)
Silicon epitaxial planar type
For switching circuits
■ Features
• Two isolated elements contained in one package, allowing high-
density mounting
• Short reverse recovery time t
rr
• Small terminal capacitance C
t
■ Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter Symbol Rating Unit
Reverse voltage V
R
80 V
Maximum peak reverse voltage V
RM
80 V
Forward current Single I
F
100 mA
Double 75
Peak forward
Single I
FM
225 mA
current
Double 170
Non-repetitive peak
Single I
FSM
500 mA
forward surge current
*
Double 375
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Internal Connection
Note)
*
:t = 1 s
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 100 mA 0.95 1.20 V
Reverse voltage V
R
I
R
= 100 µA80V
Reverse current I
R
V
R
= 75 V 100 nA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 0.9 2.0 pF
Reverse recovery time
*
t
rr
I
F
= 10 mA, V
R
= 6 V 3 ns
I
rr
= 0.1 I
R
, R
L
= 100 Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
4
1
3
2
Marking Symbol: M1B
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.
*
: t
rr
measurement circuit
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5˚
10˚
0.60
+0.10
–0.05
0.40
+0.10
–0.05
1.1
+0.2
–0.1
1.1
+0.3
–0.1
1.50
+0.25
–0.05
2.8
+0.2
–0.3
1.9
±0.2
(0.65)
(0.2)
(0.95)(0.95)
0 to 0.1
34
21
0.5R
1: Cathode 1
2: Cathode 2
3: Anode 2
4: Anode 1
EIAJ: SC-61 Mini4-G1 Package
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).
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