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Switching Diodes
1
Publication date: March 2004 SKF00047BED
Note)
*
:t = 1 s
MA4X193 (MA193)
Silicon epitaxial planar type
For switching circuit
■ Features
• Four isolated elements contained in one package
• Short reverse recovery time t
rr
• Bridge diodes for surface mounting
• Anode common + cathode common composite product
■ Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter Symbol Rating Unit
Reverse voltage V
R
80 V
Repetitive peak reverse voltage V
RRM
80 V
Forward current (Average) I
F(AV)
70 mA
Repetitive peak forward current I
FRM
150 mA
Non-repetitive peak forward I
FSM
250 mA
surge current
*
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 70 mA 1.2 V
Reverse voltage V
R
I
R
= 100 µA80V
Reverse current I
R
V
R
= 75 V 100 nA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 15 pF
Reverse recovery time
*
t
rr
I
F
= 10 mA, V
R
= 6 V 10 ns
I
rr
= 0.1 I
R
, R
L
= 100 Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
Marking Symbol: M2Z
4
12
3
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Internal Connection
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.
*
: t
rr
measurement circuit
Note) The part number in the parenthesis shows conventional part number.
1: Cathode 1
Anode 2
2: Cathode 2, 3
3: Anode 3
Cathode 4
4: Anode 1, 4
EIAJ: SC-61 Mini4-G1 Package
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5˚
10˚
0.60
+0.10
–0.05
0.40
+0.10
–0.05
1.1
+0.2
–0.1
1.1
+0.3
–0.1
1.50
+0.25
–0.05
2.8
+0.2
–0.3
1.9
±0.2
(0.65)
(0.2)
(0.95)(0.95)
0 to 0.1
34
21
0.5R
This product complies with the RoHS Directive (EU 2002/95/EC).