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Schottky Barrier Diodes (SBD)
1
Publication date: February 2008 SKH00110CED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA4ZD03
Silicon epitaxial planar type
For high speed switching
For small type power supply
For DC/DC converter
■ Features
•
Two isolated elements are contained in one package, allowing
high-density mounting
•
I
F
= 100 mA rectification is possible
•
Optimum for high frequency rectification because of its short re-
verse recovery time (t
rr
)
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics
T
a
= 25°C ± 3°C
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Parameter Symbol Conditions Min Typ Max Unit
Reverse current I
R
V
R
= 40 V 5 µA
Forward voltage V
F
I
F
= 100 mA 0.54 0.60 V
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 12 18 pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA 1.2 ns
I
rr
= 10 mA, R
L
= 100 Ω
Parameter Symbol Rating Unit
Forward current Single I
F
100 mA
Double 75
Peak forward Single I
FM
300 mA
current Double 225
Non-repetitive peak Single I
FSM
1A
forward surge current
*
Double 0.75
Reverse voltage V
R
45 V
Repetitive peak reverse voltage V
RRM
45 V
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
Note)
*
: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz.
4.
*
: t
rr
measurement circuit
1
4
2
3
■ Package
•
Code
SMini4-F1
•
Pin Name
1:Anode 1 3:Cathode 2
2:Anode 2 4:Cathode 1
■ Marking Symbol: M5A
■ Internal Connection