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Switching Diodes
1
Publication date: November 2003 SKF00061BED
MA5J002E
Silicon epitaxial planar type
For high speed switching circuits
■ Features
•
Includes 4 elements of cathode common connection
•
Parts reduction is possible
•
Ideal for surge voltage absorption
■ Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter Symbol Rating Unit
Reverse voltage V
R
80 V
Maximum peak reverse voltage V
RM
80 V
Forward current
*
1
I
F
100 mA
Peak forward current
*
1
I
FM
225 mA
Non-repetitive peak forward I
FSM
500 mA
surge current
*
1, 2
Junction temperature T
j
150 °C
Operating ambient temperature T
opr
−25 to +105 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 100 mA 1.2 V
Reverse voltage V
R
I
R
= 100 µA80V
Reverse current I
R
V
R
= 75 V 100 nA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 2 pF
Reverse recovery time
*
t
rr
I
F
= 10 mA, V
R
= 6 V 3 ns
I
rr
= 0.1 I
R
, R
L
= 100 Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.
*
: t
rr
measurement circuit
Marking Symbol: M5B
Note)
*
1: Value in single diode used.
*
2: t = 1 s
1: Anode 1 3: Anode 2
2: Cathode 1, 2, 3, 4 4: Anode 3
5: Anode 4
SMini5-F 1 Package
Internal Connection
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
1
4
2 3
5
(0.65) (0.65)
2.0
±0.1
0.7
±0.1
1.25
±0.1
2.1
±0.1
0.16
+0.1
–0.06
123
54
0.2
±0.05
(0.425)
5˚
(0.15)
5˚
0 to 0.1
This product complies with the RoHS Directive (EU 2002/95/EC).