Panasonic MA6X129 Network Card User Manual


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Rectifier Diodes
1
Publication date: March 2004 SKC00003BED
MA6X129 (MA129)
Silicon epitaxial planar type
For small power current rectification
■ Features
• Three isolated elements are contained in one package, allowing
high-density mounting
• Allowing high voltage rectification
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 200 mA 1.2 V
Reverse current I
R
V
R
= 200 V 200 nA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 4.5 pF
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note)
*
: t = l s
Marking Symbol: M4F
Note) The part number in the parenthesis shows conventional part number.
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 3 MHz.
1 : Cathode 1 4 : Anode 3
2 : Cathode 2 5 : Anode 2
3 : Cathode 3 6 : Anode 1
EIAJ : SC-74 Mini6-G1 Package
Internal Connection
6
4
1
3
5 2
2.90
1.9
±0.1
0.16
+0.10
–0.06
2.8
+0.2
–0.3
1.1
+0.3
–0.1
1.1
0 to 0.1
+0.2
–0.1
1.50
(0.65)
0.4
±0.2
+0.25
–0.05
(0.95)
0.30
+0.10
–0.05
0.50
+0.10
–0.05
(0.95)
654
132
+0.20
–0.05
5˚
10˚
Parameter Symbol Rating Unit
Reverse voltage V
R
200 V
Maximum peak reverse voltage V
RM
200 V
Output current Single I
O
200 mA
Triple 100
Repetitive peak forward
Single I
FRM
600 mA
current
Triple 200
Non-repetitive peak
Single I
FSM
1
000 mA
forward surge current
*
Triple 350
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 ∼ +150 °C
This product complies with the RoHS Directive (EU 2002/95/EC).
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