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Zener Diodes
Publication date: January 2009 SKE00050BED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MALD068XG
Silicon planar type
For ESD protection
Overview
MALD068XG is optimal for cell phones and AV application, all types of
I/O circuits.
It is possible to protect against forward and reverse surges.
Features
High resistance to surge voltages: 20 kV guaranteed
Low terminal capacitance C
t
for low loss, low distortion, and good
retention of signal waveforms.
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Peak pulse current
*
1
I
PP
3 A
Peak pulse power
*
1
P
PP
33 W
Total power dissipation
*
2
P
T
150 mW
Junction temperature
*
3
T
j
150
°C
Storage temperature T
stg
–55 to +150
°C
Electrostatic discharge ESD
±20
kV
Note)
*
1: Test method: IEC61000-4-5 (tp = 8/20 µs, Unrepeated)
*
2: Test method: IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
*
3: P
T
= 150 mW achieved with a printed circuit board.
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Breakdown voltage
*
1
V
BR
I
Z
= 5 mA 5.8 7.2 8.8 V
Clamping voltage
*
2
V
C
I
PP
= 3.0 A, tp = 8/20 µs 11.0
Ω
Reverse current I
R
V
R
= 3.5 V 500 nA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 25 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.
*
1: V
BR
guaranted 20 ms after current flow.
*
2: Pulse Waveform
3. Absolute frequency of input and output is 5 MHz
100
90
50
10
T2
T
t
T1
Percent of
I
PP
Front time:
T1 = 1.25 × T = 8 µs ±20%
Time to half value:
T2 = 20 µs ±20%
Package
Code
SSSMini2-F3
Pin Name
1: Cathode
2: Cathode
Marking Symbol: A