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Zener Diodes
Publication date: September 2005 SKE00027AED 1
MALS068
Silicon planar type
For ESD protection
Features
Electrostatic discharge ESD: ±30 kV
SS-Mini 2 pin molde type package, optimum for high-density mounting.
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Total power dissipation
*
1
P
T
150 mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
–55 to +150
°C
Electrostatic discharge
*
2
ESD
±30
kV
Note)
*
1 : P
T
= 150 mW achieved with a printed circuit board.
*
2 : Test method: IEC61000-4-2
(C = 150 pF, R = 330
Ω, Contact discharge: 10 times)
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Breakdown voltage
*
V
BR
I
R
= 5 mA 6.4 6.8 7.2 V
Reverse current
I
R
V
R
= 4.0 V 0.5
µA
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz 50 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. The temperature must be controlled 25°C for V
BR
mesurement.
V
BR
value measured at other temperature must be adjusted to V
BR
(25°C)
3.
*
: V
BR
guaranted 20 ms after current flow.
Marking Symbol: RE
Unit: mm
1: Anode
2: Cathode
EIAJ: SC-79 SSMini2-F1 Package
0.80
+0.05
–0.03
0.60
+0.05
–0.03
0.12
+0.05
–0.02
1.20
+0.05
–0.03
0
+0
–0.05
0.30±0.05
0.01±0.01
1.60±0.05
0.01±0.01
1
2
0.80±0.05(0.80)
(0.60)
(0.15)
(0.60)
5°
5°
This product complies with the RoHS Directive (EU 2002/95/EC).