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Zener Diodes
Publication date: April 2008 SKE00042AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MALS068G
Silicon planar type
For ESD protection
Overview
MALS068G is optimal for cell phones and AV application, all types of
I/O circuits.
Features
High resistance to surge voltages: 30 kV guaranteed
Low terminal capacitance C
t
for low loss, low distortion, and good
retention of signal waveforms.
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Total power dissipation
*
1
P
T
150 mW
Electrostatic discharge
*
2
ESD
±30
kV
Junction temperature T
j
150
°C
Storage temperature T
stg
-55 to +150
°C
Note)
*
1: P
T
= 150 mW achieved with a printed circuit board.
*
2: Test method: IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Breakdown voltage
*
V
BR
I
R
= 1 mA 6.4 6.8 7.2 V
Reverse current I
R
V
R
= 4 V 0.5
mA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 50 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.
*
: V
BR
guaranted 20 ms after current flow.
The temperature must be controlled 25°C for V
BR
measurement.
V
BR
value measured at other temperature must be adjusted to V
BR
(25°C).
Package
Code
SSMini2-F4
Pin Name
1: Anode
2: Cathode
Marking Symbol: RE