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Zener Diodes
Publication date: October 2005 SKE00038AED 1
MANV250GE
Silicon planar type
For surge protect
Features
Large surge reduction power
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Peak pulse power
*
1
P
PP
450 W
Peak pulse current
*
1
I
PP
9 A
Maximum peak reverse voltage V
RM
18 V
Total power dissipation
*
2
P
T
150 mW
Junction temperature T
j
150
°C
Storage temperature T
stg
–55 to +150
°C
Electrostatic discharge
*
3
ESD
±30
kV
Note)
*
1 : Test method: IEC61000-4-5 (tp = 8/20 ms, Unrepeated)
*2: P
T
= 150 mW achieved with a printed circuit board.
*
3 : Test method: IEC61000-4-2 (C = 150 pF, R = 330 W, Contact discharge: 10 times)
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Breakdown voltage
*
1
V
BR
I
R
= 1 mA 20.0 25.0 30.0 V
Reverse current I
R
V
R
= 18 V 10.0
mA
Clamping voltage
*
2
V
C
I
PP
= 9.0 A, tp = 8/20 ms 50.0 V
Terminal capacitance C
t
I
R
= 0 V, f = 1 MHz 76 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.
*
1: V
Z
guaranted 20 ms after current flow.
*
2: Pulse Waveform
100
90
50
10
T2
T
t
T1
Percent of
I
PP
Front time:
T1 = 1.25 × T = 8 µs ±20%
Time to half value:
T2 = 20 µs ±20%
Package
Code
SMini2-F3
Pin Name
1: Anode
2: Cathode
Marking Symbol: RD